ms8150 - p2613 microsemi microwave products 75 technology drive, lowell, ma. 01851, 978-442-5600, fax: 978-937-3748 page 1 gaas schottky devices low r s fli p chi p tm ? copyright ? 2008 rev: 2009-05-11 insertion t emperature 250c for 10 seconds incident power +20 dbm @ 25c forward current 15 ma @ 25c reverse v oltage 3 v operating t emperature -55c to +125c storage t emperature -65c to +150c dimensions size: 26 x 13 mils thickness: 5 mils bond pad size: 5 x 8 mils featur es capacitance (65 ff typ.) low series resistance (3 ? typ.) cut-off frequency > 500 ghz large gold bond pads specifications @ 25c (per junction) v f (1 ma): 650?750 mv r s (10 ma): 7 ? max. i r (3 v): 10 ? a max. c t (0 v): 80 ff max. maximum ratings description the MS8150-P2613 is a gaas flip chip schottky diode designed for use as mixer and detector elements at microwave and millimeter wave frequencies. their high cut-off frequency insures good performance at frequencies to 100 ghz. applications include: transceivers, digital radios and automotive radar detectors. these flip chip devices incorporate microsemi?s expertise in gaas material processing, silicon nitride protective coatings and high temperature metallization. they have large, 5 x 8 mil, bond pads for ease of insertion. the MS8150-P2613 is priced for high volume commercial and industrial applications. important: for the most current data, consult our website : www.microsemi.com specifications are subject to change. consult factory for the latest information . these devices are esd sensitive and mu st be handled using esd precautions. 1 the ms8150 series of products are supplied with a rohs complaint gold finish .
ms8150 - p2613 microsemi microwave products 75 technology drive, lowell, ma. 01851, 978-442-5600, fax: 978-937-3748 page 2 gaas schottky devices low r s fli p chi p tm ? copyright ? 2008 rev: 2009-05-11 inches mm dim min. max. min. max. a 0.0255 0.0265 0.6480 0.6730 b 0.0125 0.0135 0.3180 0.3430 c 0.0046 0.0056 0.1170 0.1420 d 0.0075 0.0085 0.1910 0.2160 e 0.0170 0.0180 0.4320 0.4570 f 0.0050 0.0060 0.1270 0.1520 g 0.0045 0.0055 0.1140 0.1400 h 0.0016 0.0020 0.0406 0.0508 j 0.0023 0.0027 0.0584 0.0686 p2613 c cathode j d b a g f e h spice model parameters (per junction) i s r s n tt c j0 c p m e g v j bv ibv a ? sec pf pf ev v v a 2 x10 -13 3 1.2 0 0.045 0.02 0.50 1.42 0.85 4 1 x 10 -5 important: for the most current data, consult our website : www.microsemi.com these devices are esd sensitive and mu st be handled using esd precautions. 1 the ms8150 is supplied with a rohs complaint gold finish .
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